Single-dopant memory effect in P-doped Si SOI-MOSFETs

Recent studies of single electron transport through a single dopant atom in nanoscale field-effect transistors (FETs) have revealed that discrete dopants can work as quantum dots (QDs). In nanoscale FETs with higher channel doping, dopant atoms may work also as traps for single electrons. This provides the frame model for a new type of device: single dopant memory. We observed single-electron trapping and detrapping features in the electrical characteristics of phosphorus-doped FETs. The low-temperature source-drain current/front gate voltage (I
_sd
-V
_fg
) characteristics show hysteresis behavior, which is a signature of charging effect. Based on our Monte Carlo simulations, we propose a simple circuit model describing double-dopant effect.