3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/SiGe selective etch process

In this work, we propose high-density 3-D stacked NAND flash memory structure which has crystalline body stacks. We found the cross-talk between adjacent bodies in a body stack could be a severe problem for the first time. We analyzed the cross-talk and proposed a method to suppress the cross-talk. Key characteristics of proposed structure are investigated by using 3-D TCAD simulation tool.