High-voltage double-implanted power MOSFET's in 6H-SiC

We report on the first planar high-voltage MOSFET's in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET's.