Benchmarking of III–V n-MOSFET Maturity and Feasibility for Future CMOS

With the consideration of III-V channels for future CMOS, an urgent need for standard metrics to assess the maturity of III-V MOSFETs and to investigate their suitability for future CMOS has arisen. By proposing such standard metrics (Q ≡g
_m
/S), we find that present InGaAs n-MOSFETs are trailing Si MOSFETs by over a factor of 30. Still, experimental PHEMT data make a clear case for the utilization of InAs channels in future CMOS from a performance standpoint both for HP (1.4-1.7 times the current drive increase over Si) and LOP (1.7-3 times) applications.