Small-defect detection in sub-100nm SRAM cells using a WL-pulse timing-margin measurement scheme

The detection of small defects in an SRAM cell with our WL-pulse timing-margin measurement scheme has been demonstrated on a 90nm 2Mb SRAM. WL-width control with a high resolution of 24.1ps and a wide range improves the sensitivity of detection for delay and SNM variations with only a 0.6% area overhead, and statistical analysis makes possible the detection of small-delay defects that, in conventional testing, would be buried due to delay variations in peripheral circuitry.