Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of ~15 μm with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm
²
/V · sec, a threshold voltage of -1.3 V, and an on/off current ratio of 10
⁸
.