A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $/f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies
f
_T
of 240 GHz, maximum oscillation frequencies
f
_max
of 330 GHz, and breakdown voltages BV
_CEO
of 1.7 V along with high-voltage HBTs (
f
_T
= 50 GHz,
f
_max
= 130 GHz, BV
_CEO
= 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and
LC
oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.