Toward full crystal oscillator integration for RF applications

This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35μm SiGe BiCMOS technology from austriamicrosystems AG
^®
. Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm
²
).