Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs

For the first time, ultra shallow junctions (x
_j
<; 10nm) are demonstrated using Plasma Immersion Ion Implantation for both n-type and p-type dopants in Ge. High electrical activation (>1×10
²⁰
cm
^-3
) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO
₂
interfacial layer for gate dielectric, which provides substrate orientation independent D
_it
and mobility enhancement for Ge high-k N/P MOSFETs.