Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs

The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high I
_ON
and the high bandgap of narrow-GNR to attain low I
_OFF
. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve I
_ON
as high as 1.3 mA/μm, I
_ON
/I
_OFF
ratio as high as 10
⁹
, and S as small as 10 mV/dec at V
_DD
=0.5 V. Compared to the HP MOSFET with L
_g
=25 nm, the wide-narrow GNR T-FET exhibits 2X and 10
⁴
X improvement in I
_ON
and I
_ON
/I
_OFF
ratio at V
_DD
=0.5 V, which makes it suitable for HP/LP applications.