DC and flicker noise models for passivated single-walled carbon nanotube transistors

DC and intrinsic low frequency noise properties of p-channel depletion-mode single-walled carbon nanotube field effect transistors (SWCNT-FETs) are investigated. To characterize the intrinsic noise properties a thin atomic layer deposited (ALD) HJO2 gate dielectric which also works as a passivation layer is used to isolate SWCNT-FETs from environmental factors.