Analytical 2D model for the channel electric field in undoped Schottky barrier Double-Gate MOSFET

A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson's equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation results.