Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures

The I-V characteristics of GaAs n/sup +/-i-p/sup +/-i-n/sup +/ diode structures grown by MLE with source-drain distances from 500 /spl Aring/ to 950 /spl Aring/ have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made.