Silicon bipolar transistor design and modeling for microwave integrated circuit applications

This paper summarizes the recent progress in the fabrication, design, and modeling of silicon and Si/SiGe bipolar transistors for high-frequency microwave integrated circuit applications. These devices are now capable of performance levels that were only achievable with GaAs technology just a few years ago. The specific device requirements for low-noise signal and power amplifiers are discussed, as well as required improvements in device modeling for these applications.