Electron Trap Profiling Near $\hbox{Al}_{2} \hbox{O}_{3}$/Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and Sensing

The goal of this letter is to investigate and characterize the defects at the Al
₂
O
₃
/gate interface in TANOS memory stacks. To this purpose, gate-side trap spectroscopy by charge injection and sensing is applied on devices featuring different metal gates and different postdeposition anneals. The results show that a high concentration of defect is present in crystalline samples with a TaN or TiN gate.