Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

Using novel stacked covalent-bond-dielectric GeO
x
(GeO) on metal-oxide SrTiO
₃
to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10
⁶
memory window for 10
⁵
-s retention at 85
^°
C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.