DB (Dielectric Barrier) IGBT with extreme injection enhancement

A 1200V DB (Dielectric Barrier) IGBT with new surface structure and with extreme injection enhancement effect is proposed for the first time. P-base region is confined in the thin emitter layer and is almost separated electrically from drift region by the internal buried oxide layer. The new structure is electrically equivalent to the trench gate IGBT with very narrow mesa width and very wide trench width. The fabrication of the DB-IGBT does not need submicron process technology.