Ultra-wide-band low noise amplifier using inductive feedback in 90-nm CMOS technology

This paper proposes an inductive feedback technique implemented in the ultra-wide-band (UWB) low noise amplifier (LNA). Using the technique, the proposed circuit not only enhances the bandwidth but also reduces the noise figure. Furthermore, both wide-band matching and small chip area are achieved by adopting only one on-chip inductor in feedback path of the circuit. This UWB LNA was fabricated by using foundry 90 nm CMOS technology. The LNA consumes 30 mW, and occupies 0.375 mm area. Moreover, the measured power gain is 10 dB, 3-dB bandwidth is 14GHz, input third order intercept point (IIP
₃
) is large than -4 dBm, and the noise figure is 5.8 dB during the wideband operation.