Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (
ft
and
f
_max
) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on
f
_max
than
ft
. Besides, we found that the noise stemmed from the body resistance (
Rb
) would contribute to the output noise current, and degrade the minimum noise figure (NF
_min
). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.