2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Analytical model for the two-dimensional (2-D) front-gate and the back-gate surface potential distribution of the vertical fully-depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson's equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the analytical model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.