Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer

A new method to monolithically integrate a GaAs MESFET and a resonant cavity InGaAs QW LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.