The IBMCT: a novel MOS-gated thyristor structure

This paper addresses the analysis of the Insulated Base MOS-Controlled Thyristor (IBMCT), a novel MOS-thyristor structure compatible with IGBT process technology. The IBMCT turn-off process is based on the existence of a Floating Ohmic Contact (FOC) which allows fast hole removal from the p-body region. The device operation mode and its electrical characteristics are analyzed with the aid of 2-D numerical simulations. Experimental measurements confirm the ability to control both turn-on and turn-off processes by biasing the two independent gate electrodes. A comparison of the electrical characteristics with those obtained from IGBT and BRT is also provided.