Effect of annealing sequences on the structure of buried oxide layer in low-dose SIMOX

SIMOX wafers with a dose of /spl sim/4E17 cm/sup -2/ (low-dose) have been studied because of the high production throughput and low threading dislocation density in the top Si layer compared with high-dose wafers. A relatively new technique for making the SIMOX structure has been developed by using low-dose ion implantation and subsequent high temperature annealing. However, the details of the physical process are still unclear. In this paper, we report on the mechanism of the buried oxide (BOX) formation in low-dose SIMOX by studying the effect of the ramping rate and annealing time on the structure.