Design and fabrication of planar GaAs Schottky barrier diodes for submillimeter-wave applications

The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Finally the Schottky diode was fabricated and measured.