Confined lateral selective epitaxial growth of silicon for device fabrication

An epitaxy technique, confined lateral selective epitaxial growth (CLSEG), which produces wide, thin slabs of single-crystal silicon over insulator, using only conventional processing, is discussed. As-grown films of CLSEG 0.9 mu m thick, 8.0 mu m wide, and 500 mu m long were produced at 1000 degrees C at reduced pressure. Junction diodes fabricated in CLSEG material show ideality factors of 1.05 with reverse leakage currents comparable to those of diodes built in SEG homoepitaxial material. Metal-gate p-channel MOSFETs in CLSEG with channel dopings of 2*10/sup 16/ cm/sup -3/ exhibit average mobilities of 283 cm/sup 2//V-s and subthreshold slopes of 223 mV/decade.<
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