Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/Cu
_x
O/Cu structure, by introducing a thin phase-change Ge
₂
Sb
₂
Te
₅
(GST) film between Cu
_x
O and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.