Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (μ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.