A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).