Validation of a theoretical model for NFmin estimation of SiGe HBTs

An evaluation based on a comparative study between two previously published models for minimum noise figure (NFmin) for heterojunction bipolar transistors (HBT) is presented. The complete set of noise parameters is extracted from the Y parameters of the transistor. The results from the published models have been compared with simulation and measurement results in IHP's SiGe C: BiCMOS technology.