Design and applications of optically controllable finline structures

The design of finline structures on a semiconducting substrate is described. Using high-resistivity silicon and gallium arsenide substrates, insertion losses between 1 dB and 2 dB are achieved. By illuminating the slot region with a laser diode, attenuators and/or switches with on-off ratios up to -40 dB are realized in the 26.5-40 GHz region. The attenuation, phase shift, and switching times are given. Other applications are also discussed.<
>