InGaAsP DC-PBH semiconductor laser diode frequency response model

Presents a simple and accurate model for the frequency response of InGaAsP double-channel planar buried heterostructure (DC-PBH) semiconductor laser diodes intensity modulated in the microwave range. It is shown that the parasitic capacitance associated with the reverse-biased blocking junction can significantly reduce the 3-dB modulation bandwidth. The results obtained and alternatives to improve the high-frequency performance are discussed and compared to experiments.<
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