Variability analysis of TiN FinFET SRAM cell performance and its compensation using Vth-controllable independent double-gate FinFET

Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the V
_th
variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the V
_th
-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.