Interpretation of PBTI/ TDDB predicted lifetime based on trap characterization by TSCIS in Vth-adjusted transistors

We investigate the change in the energy profile of the initially present HfSiO defects in nMOSFETs after V
_th
-adjustment by As and Ar implantation. We demonstrate that after implantation, PBTI lifetime is considerably improved as the present shallow traps in the implanted devices are not accessible at real operating conditions. We also study the TDDB to consider the effect of the generated defects with stress and we conclude that the same lifetime within specs is achieved for both no-implant and implanted devices.