NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and dispersive hole trapping model

I
_DLIN
shift due to NBTI is measured using UF-OTF I
_DLIN
method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of I
_DLIN
shift at different stress EOX and T is modeled from ultra-short to long stress time using non-dispersive H/H
₂
RD model governed N
_IT
and dispersive N
_h
components. N
_IT
and N
_h
model parameters show consistent E
_OX
and T dependent behavior across all devices. Finally, extrapolated tt
_F
values are obtained for different E
_OX
from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.