A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications

A Cu
_x
O-based resistive memory is successfully integrated in 0.13 μm logic process. Operation algorithm is optimized to achieve low power consumption with reset current down to 30 μA. High thermal stability and small cell size less than 22 F
²
have been demonstrated. The advantages make this device promising for system on chip non-volatile memory applications.