A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

A split-gate deep-trench MOSFET (DT-MOS) with its split gate self-biased to an integrated low voltage supply is proposed. Due to the split gate being biased to an approximately constant voltage, this structure has a smaller amount of gate-to-drain charge Q
_gd
without increase in the specific on-resistance R
_on
, compared with the conventional DT-MOS. Numerical simulation results show that the figure of merit (FOM = Q
_gd
·R
_on
) is largely reduced, compared with that of the conventional DT-MOS.