GaN Schottky Barrier Photodetectors

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10
^-10
W and 2.26 × 10
⁹
cmHz
^0.5
W
^-1
, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 × 10
^-6
W and 4.44 × 10
⁵
cmHz
^0.5
W
^-1
, respectively, for the PD prepared on a conventional sapphire substrate.