A 13ns/350mW 2Kw × 9b RAM using Hi-BiCMOS Technology

A 2-Kword × 9-bit, TTL-compatible, high-speed RAM has been developed using 2 μm Hi-BiCMOS technology. The RAM has an address access time of 13 ns, an active power of 350 mW, and a standby power of 40 mW. These characteristics have been achieved by overall use of Bipolar-CMOS combination circuits.