New RF intrinsic parameters extraction procedure for advanced MOS transistors

A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.