Correlation between Direct Charge Measurement (DCM) and LCR meter on deep submicron CMOS test structure capacitance measurement

This paper reports capacitance measurement correlation between Direct Charge Measurement (DCM) and conventional LCR meter on 0.18um CMOS test structure. Measurement results of interconnect and MOSCAP test structures are presented. Mathematical analysis shows that DCM and LCR meter results correlate very well for MOSCAP as well. Amplitude Adjustment Method and Amplitude Extrapolation Methods are proposed to calibrate nonlinear C-V measurement errors. Theoretical discussion can also be applied to Charge-Based Capacitance Measurement (CBCM) because it uses similar stimulus.