GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements

GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.