RTS Noise Characterization in Single-Photon Avalanche Diodes

Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-$\mu \hbox{m}$ CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35- $\mu\hbox{m}$ CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.