$\hbox{TiSi}_{2}$ Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory

A TiSi
₂
nanocrystal (NC) memory was fabricated. TiSi
₂
NCs were synthesized on SiO
₂
by annealing Ti covered Si NCs. Compared to the reference Si NC memory, both experiment and simulation results show that TiSi
₂
NC memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide NCs. Due to thermally stable, CMOS compatible properties, TiSi
₂
NCs are highly promising for nonvolatile memory device application.