Frequency response of avalanche photodetectors with separate absorption and multiplication layers

We present analytical expressions for the frequency response of avalanche photodetectors (APDs) with separate absorption and multiplication regions (SAM). The effect of the electric field profile in the multiplication layer on frequency response is considered for the first time. Previous theories have assumed that the multiplication layer is very thin and the peak electric field, which corresponds to the effective multiplication plane, is positioned away from the absorption layer. This is a poor assumption for many devices, and in particular for silicon hetero-interface photodetectors (SHIPs). We present a theoretical model in which the thickness of the multiplication layer is arbitrary and the peak electric field may be positioned arbitrarily in relation to the absorption layer. We also consider the effects of parasitics, transit-time, and avalanche buildup time. Both front and back illumination from either multiplication layer or absorption layer are considered. The calculated results are compared with experimental results for existing SHIP's and performance predictions are also made for optimized SHIP structures. SHIP APDs with gain-bandwidth product in excess of 500 GHz are possible.