Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

We report on the experimental temperature-dependent characteristics of vertical In
_0.53
Ga
_0.47
As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor (I
_OFF
) is determined by the ungated p
⁺
-i-n
⁺
reverse bias leakage and is dominated by Shockley-Read-Hall generation-recombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxide-semiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In
_0.53
Ga
_0.47
As TFET highlights the importance of passivating the III-V and dielectric interface.