Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i.e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f
_T
= 140 GHz.