Monte Carlo simulation of high field transport and impact ionization in GaAs p/sup +/in/sup +/ diodes

Two Monte Carlo models, one using realistic band structure, the other an analytical approximation, have been applied to the study of impact ionization in bulk GaAs and short p/sup +/in/sup +/ diodes. The results were compared with experiment. It was found that the faster, simpler analytical model provided an excellent description of the particle dynamics agreeing extremely well both with experiment and the more sophisticated model.