Optoelectronic Devices Based on the Directed Self-Assembly of Single InAs/InP Quantum Dots

Optoelectronic devices based on single, self-assembled semiconductor quantum dots are attractive for applications in secure optical communications, quantum computation and sensing. In this paper we show how it is possible to dictate the nucleation site of individual InAs/InP quantum dots using a directed self-assembly process, to control the electronic structure of the nucleated dots and also how to control their coupling to the optical field by locating them within the high field region of a photonic crystal nanoocavity. For application within fiber networks, these quantum dots are targeted to emit in the spectral region around 1550 nm.