Influence of Hydrogen Related Defects on the Qot' Dit Build-Up Due to Stress and Annealing in the MOS System

The build-up of oxide charges, Qut, and interface states, Dit, during stress -irradiation or bias temperatures (BT)-as well as the annealing of these defects has been investigated. The post-stress annealing and the degradation process due to BT-stress can be explained by the chemical reaction of the hydrogen in Lhe SiO!2. With this new model it becomes possible to describe the correlation of irradiation and BT-stress and moreover the sensitivity of MOS-devices against carrier injection as well as reverse annealing, dose rate effects and the temperature dependent D!it-annealing.