High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors

In this paper we report on invertible DHBTs fabricated on GaInAsP/InP. Localized Zn diffusion allowed for practically equal active transistor areas in the forward and inverse mode. Transit frequencies up to 6 GHz with collector currents over 100mA could be demonstrated on these devices. As an application, three transistors were monolithically integrated to form a laser driver circuit showing modulation rates up to 2.6 Gbit/s.